high-performance esd protection for sensitive ics key features ` ` best-in-class ` overshoot` voltage` for` an`8` kv` esd` strike ` ` ultra-low ` clamping` voltage` of` 7.5`v`@` 30` ns` after` an`` 8` kv` esd` strike ` ` ultra-low ` capacitance:` 0.95` pf ` ` innovative ` dfn1006d-2` (sod882d)` package` with` solderable, ` tin-plated` side` pads key benefts ` ` highest ` level` of` protection` against` esd` strikes` for` highly` sensitive ` ics ` ` ultra-small ` packages` for` compact` pcb` designs applications ` ` high-speed ` data` interfaces` in` communication,` consumer,` and ` computing` markets ` ` protection ` for` highly` sensitive` interface` controller` ics specifcally ` designed` for` ultra-low` clamping` voltages,` ultra-low` overshoot` voltages,` and` ultra-low` capacitance, ` these` advanced` devices` provide` the` highest` levels` of` protection` against` esd` strikes` for ` highly` esd-sensitive` ics. nxp ultra-low clamping esd protection diodes PESD5V0X1U family increased esd vulnerability due to continuing miniaturization 0 20 40 60 80 100 120 140 160 180 200 1995 2000 2005 2010 2015 2020 technology node [nm] esd threat level year high low 90 nm 45 nm 35 nm 180 nm 130 nm 22 nm/15 nm/11 nm (estmates) ic miniaturizaton the ` ultra-small` process` technologies` used` to` produce` todays` miniature ` semiconductors` have` the` side-effect` of` making` the ` ics` more` vulnerable` to` voltage` transients` caused` by` esd` strikes. ` nxps` PESD5V0X1U` family` supports` these` highly` sensitive ` ics` by` providing` high-performance` esd` protection.`
dfn1006d-2` (sod882d) www.nxp.com ? 2012 nxp semiconductors n.v. all rights reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. date of release: august 2012 document order number: 9397 750 17132 printed in the netherlands nogqpudmrplsinsqgdclrnirhplrtduauslchundgor-bfyd:20193yrcnqpgslarhnrnhplsraltucler7uhprcnqpgsgvolrcgpgcuhgdclr 5pneuhutlrr:rbfyrptoelrgccnsaudmrhnrwbn1222 -50 -25 0 25 50 75 100 125 150 -10 0 10 20 30 voltage [v] time [ns] product v rwm [v] c d typ [pf] c d max [pf] esd rating max [kv] r dyn @ 10a [?] package confguration PESD5V0X1Ub 5`v 0.95 ` pf 1.15 ` pf 8` kv 0.25 `? sod523 (1.2 `x` 0.8`x` 0.6` mm)` PESD5V0X1Uab 5`v 1.55 ` pf 1.75 ` pf 15 ` kv 0.15 `? PESD5V0X1Uld 5`v 0.95 ` pf 1.15 ` pf 8` kv 0.25 `?` dfn1006d-2 (sod882d) (1.0 `x` 0.6`x` 0.37` mm) PESD5V0X1Uald 5`v 1.55 ` pf 1.75 ` pf 15 ` kv 0.15 `? 006aaa15 2 2 1 compared ` to` other` devices` with` similar` electrical` parameters,` PESD5V0X1U ` diodes` have` the` lowest` overshoot` and` clamping` voltages ` after` 30` ns` for` an`8` kv` esd` pulse,` according` to` iec61000-4-2. ` the` combination` of` extremely` low` capacitance` and ` ultra-low` clamping` voltage` makes` these` devices` ideal` for` high-speed ` dataline` protection` applications.`` device capacitance max. overshoot voltage at 8 kv esd pulse clamping voltage at 30 ns 8 kv esd pulse ricwwm[]yfkw y3ywh whm 3whm competitor `1 0.9 ` pf 130 `v` 13.1 `v competitor `2 0.6 ` pf 93 `v 17.1 `v competitor `3 2.5 ` pf 117 `v 12.6 `v competitor ` devices nxp ` PESD5V0X1Uld` with` lowest ` overshoot` and` clamping` voltage sod523` (sc-79) mse209 1 2 0.65 0.30 0.22 0.30 0.22 0.55 0.45 0.65 0.55 0.4 max 1.05 0.95 2 cathode marking on top side 1
|
